Infineon BSZ070N08LS5ATMA1
$ 1.139
Production
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Min
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Inventory History
3 month trend: +24.75%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon BSZ070N08LS5ATMA1.
CAD Models
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Supply Chain
Country of OriginAustria, Germany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-08-18
Lifecycle StatusProduction (Last Updated: 5 months ago)
Descriptions
Descriptions of Infineon BSZ070N08LS5ATMA1 provided by its distributors.
Power MOSFET, N Channel, 80 V, 74 A, 0.007 ohm, TSDSON-FL, Surface Mount
Non-Compliant 1 mm Tape & Reel Production (Last Updated: 2 years ago) 5000 1.8 nF 69 W
OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package, PG-TSDSON-8, RoHS
Infineon SCT
BSZ070N08LS5 Series 80 V 13 A 7 mOhm 69 W 14.1 nC N-Channel MOSFET - TSDSON-8
Trans MOSFET N-CH 80V 13A 8-Pin TSDSON EP T/R
Power Field-Effect Transistor, 40A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
69W 20V 2.3V 14.1nC@ 4.5V 1individualNChannel 80V 7mΩ@ 10V 50A 1.8nF@ 40V SON SMD mount 1.1mm(height)
Infineon BSZ070N08LS5ATMA1 MOSFET
MOSFET, N CH, 80V, 74A, TSDSON-FL-8;
TSDSON-8(3.3x3.3) MOSFETs ROHS
MOSFET, N CH, 80V, 74A, TSDSON-FL-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V
Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +24.75%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Number of Terminals3
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vds)80 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.8 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation69 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance7 mΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation69 W
Schedule B8541290080
Turn-Off Delay Time24.6 ns
Turn-On Delay Time6.1 ns
Dimensions
Height1 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon BSZ070N08LS5ATMA1.
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCAffected
RoHSCompliant
Compliance Statements