GeneSiC Semiconductor G3R75MT12D
MOSFET, SIC, N-CH, 1.2KV, 41A, 207W; Available until stocks are exhausted
$ 9.35
Production
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Min
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Inventory History
3 month trend: -0.57%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for GeneSiC Semiconductor G3R75MT12D.
CAD Models
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Supply Chain
Country of OriginUSA
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-05-17
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusPRODUCTION (Last Updated: 5 years ago)
Descriptions
Descriptions of GeneSiC Semiconductor G3R75MT12D provided by its distributors.
MOSFET, SIC, N-CH, 1.2KV, 41A, 207W; Available until stocks are exhausted
Power Field-Effect Transistor, 38A I(D), 1200V, 0.097ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263
Sic Mosfet, N-Ch, 1.2Kv, 41A, 207W; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:3Pins; Rds(On) Test Voltage:15V; Power Dissipation:207W Rohs Compliant: Yes |Genesic G3R75MT12D
Manufacturer Aliases
GeneSiC Semiconductor has several brands around the world that distributors may use as alternate names. GeneSiC Semiconductor may also be known as the following names:
- GENESIC
- GENESIC SEMI
- GENESIC SEMICONDUCTOR INC
Inventory History
3 month trend: -0.57%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)36 A
Drain to Source Resistance97 mΩ
Max Operating Temperature175 °C
Max Power Dissipation182 W
Min Breakdown Voltage1.2 kV
Min Operating Temperature-55 °C
Number of Elements1
Datasheets & Documents
Download datasheets and manufacturer documentation for GeneSiC Semiconductor G3R75MT12D.