Diodes Inc. ZXT849KTC
$ 0.82
Production
Inventory History
3 month trend: -99.72%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-12-10
Lifecycle StatusProduction (Last Updated: 4 months ago)
Related Parts
Diodes Inc.ZXT1053AKTC
Bipolar (BJT) Single Transistor, NPN, 75 V, 5 A, 4 W, TO-252, Surface Mount
Diodes Inc.ZXT690BKTC
Bipolar (BJT) Single Transistor, NPN, 45 V, 3 A, 3 W, TO-252 (DPAK), Surface Mount
Descriptions
Descriptions of Diodes Inc. ZXT849KTC provided by its distributors.
Bipolar (BJT) Single Transistor, NPN, 30 V, 7 A, 4.2 W, TO-252 (DPAK), Surface Mount
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
ZXT849K Series NPN 30 V 7 A 4.2 W Low Saturation Transistor SMT - TO-252-3
Trans GP BJT NPN 30V 7A 4200mW Automotive 3-Pin(2+Tab) DPAK T/R
Bipolar Transistors - BJT NPN 30V
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Inventory History
3 month trend: -99.72%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight350.003213 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage230 mV
Collector Emitter Voltage (VCEO)30 V
Continuous Collector Current7 A
Current Rating7 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min40
Max Breakdown Voltage30 V
Max Collector Current7 A
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation4.2 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation4.2 W
Schedule B8541290080
Transition Frequency100 MHz
Voltage Rating (DC)30 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements