Diodes Inc. ZTX851

Name: Diodes Inc. ZTX851
Brand: Diodes Inc.
SKU: ZTX851

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

$ 0.58

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet	2	66K6783	49	1		1.800	1.210	0.864	0.673	0.623	5d
Newark		ZTX851	49	1		1.790	1.200	0.859	0.668	0.618
DigiKey		ZTX851-ND	3,545	1	Bulk	1.880	1.196	0.803	0.580	0.464
TME	2	ZTX851	0	1		1.790	1.168	0.800	0.560	0.450	21h
RS (Formerly Allied Electronics)		ZTX851	0	5	Bulk		1.610	1.420	1.420	1.420	14h

Inventory History

3 month trend: -39.22%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. ZTX851.

Newark

Datasheet3 pages19 years ago

IHS

TME

Diodes Inc SCT

Future Electronics

Inventory History

3 month trend:

-39.22%

CAD Models

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Alternate Parts

This Part

Alternate Parts

Diodes Inc.ZTX851

Diodes Inc.ZTX851STZ

Price @ 1000

$ 0.58

$ 0.572

Stock

510,160

230,916

Authorized Distributors

Mount

Through Hole

Case/Package

TO-92

TO-226-3

Polarity

NPN

Collector Emitter Breakdown Voltage

60 V

Max Collector Current

5 A

Transition Frequency

130 MHz

Collector Emitter Saturation Voltage

250 mV

hFE Min

Power Dissipation

1.2 W

Supply Chain

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Diodes Inc. ZTX851 provided by its distributors.

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

IHS

ZTX851 Series NPN 5 A 60 V Silicon Planar Medium Power Transistor - TO-92-3

Future Electronics

TRANSISTOR NPN 60V 5000MA TO92-3

DigiKey

BIPOLAR TRANSISTOR, NPN, 60V; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:60V; Transition Frequency Typ, ft:130MHz; Power Dissipation, Pd:1.2W; DC Collector Current:5A; DC Current Gain Max (hfe):200 ;RoHS Compliant: Yes

Newark

TRANSISTOR, NPN E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:250mV; Continuous Collector Current Ic Max:5A; Current Ic @ Vce Sat:5A; Current Ic Continuous a Max:5A; Current Ic hFE:2A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:130MHz; Hfe Min:100; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Ptot Max:1.2W; Pulsed Current Icm:20A; Transistor Type:Power Bipolar; Voltage Vcbo:150V

element14 APAC