Diodes Inc. DMN10H170SK3-13
$ 0.29
Production
Price and Stock
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SKU
Min
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Bulk Pricing
Inventory History
3 month trend: -0.28%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. DMN10H170SK3-13.
CAD Models
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Related Parts
Diodes Inc.DMP10H400SK3-13
Single P-Channel 100 V 300 mOhm 8.4 nC 42 W Silicon SMT Mosfet - TO-252-3
InfineonIRFR120NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W
Descriptions
Descriptions of Diodes Inc. DMN10H170SK3-13 provided by its distributors.
Transistor: N-MOSFET; unipolar; 100V; 7.5A; 0.16ohm; 17W; -55+150 deg.C; SMD; TO252(DPAK)
Mosfet, N-Ch, 100V, 12A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN10H170SK3-13
Power MOSFET, N Channel, 100 V, 12 A, 0.099 ohm, TO-252 (DPAK), Surface Mount
N-Channel 100 V 140 mOhm Surface Mount Enhancement Mode Mosfet - TO-252-3
Power Field-Effect Transistor, 12A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Inventory History
3 month trend: -0.28%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance160 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time12.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.167 nF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation42 W
Rds On Max140 mΩ
Rise Time11.1 ns
Schedule B8541290080
Turn-Off Delay Time42.6 ns
Turn-On Delay Time10.5 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. DMN10H170SK3-13.
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
Compliance Statements