가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SISA10DN-T1-GE3CT-ND | 1,624 | 1 | Cut Tape | ||||||||
| TME | SISA10DN-T1-GE3 | 0 | 1 | 8h | ||||||||
| TTI | SISA10DN-T1-GE3 | 0 | 3K | Tape & Reel | 10h | |||||||
| Newark | SISA10DN-T1-GE3 | 0 | 3K | Tape & Reel | ||||||||
| RS (Formerly Allied Electronics) | SISA10DN-T1-GE3 | 0 | 3K | Bulk | 1d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-05-20
Lifecycle StatusNRND (Last Updated: 4 months ago)
관련 부품
VishaySIRA10DP-T1-GE3
N-Channel 30 V 60 A 5 W 3.7 mOhm Surface Mount Power Mosfet - PowerPAK® SO-8
VishaySIRA12DP-T1-GE3
Single N-Channel 30 V 4.3 mOhm TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8
설명
유통업체에서 제공한 Vishay SISA10DN-T1-GE3에 대한 설명입니다.
SEMICONCUCTOR, MOSFET;TRENCHFET;N-CHANNEL;30V;30A;3.7MOHM @ 10V;POWERPAK 1212-8
MOSFET, N CHANNEL, 30V, 30A, POWERPAK 12
Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK 1212 T/R
Vishay NMOS TrenchFET, Vds=30 V, 30 A, PowerPAK 1212-8, , 8
Power Field-Effect Transistor, 30A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.7 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.425 nF
Max Operating Temperature150 °C
Max Power Dissipation39 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.6 W
Rds On Max3.7 mΩ
Schedule B8541290080
Threshold Voltage1.1 V
Turn-Off Delay Time27 ns
Turn-On Delay Time20 ns
Dimensions
Height1.12 mm
Length3.4 mm
Width3.4 mm