가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | SIRA12DP-T1-GE3 | 2,995 | 1 | |||||||||
| Verical | SIRA12DP-T1-GE3 | 1,900 | 5 | |||||||||
| DigiKey | SIRA12DP-T1-GE3CT-ND | 5,553 | 1 | Cut Tape | ||||||||
| TTI | SIRA12DP-T1-GE3 | 3,000 | 3K | Tape & Reel | 12h | |||||||
| TME | SIRA12DP-T1-GE3 | 0 | 1 | 7h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-02-27
Lifecycle StatusNRND (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Vishay SIRA12DP-T1-GE3에 대한 설명입니다.
Single N-Channel 30 V 4.3 mOhm TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8
SEMICONCUCTOR, MOSFET;TRENCHFET;N-CHANNEL;30V;25A;4.3MOHM @ 10V;POWERPAK SO-8
N-Ch Powerpakso-8 Bwl 30V Gen4 4.3/6.0 Mohm@10V/4.5V Rohs Compliant: Yes
30V 25A 31W 4.3m´Î@10V10A 2.2V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS
Power Field-Effect Transistor, 25A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Vishay NMOS, Vds=30 V, 25 A, PowerPAK SO-8
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
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- Vishay Thin Film
- Vishay Intertechnology
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- Vishay Semiconductors
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- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
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- VISH/IR
- VSHY
- VSH
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- VISHAY ELECTRONIC
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- Vishay Semiconductor Diodes Division
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기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)25 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4.3 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.07 nF
Max Operating Temperature150 °C
Max Power Dissipation31 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation4.5 W
Rds On Max4.3 mΩ
Resistance4.3 mΩ
Schedule B8541290080
Threshold Voltage1.1 V
Turn-Off Delay Time25 ns
Turn-On Delay Time20 ns
Dimensions
Height1.12 mm
Length6.25 mm
Width5.26 mm