유통업체에서 제공한 Vishay SIR418DP-T1-GE3에 대한 설명입니다.
VISHAY SIR418DP-T1-GE3 MOSFET Transistor, N Channel, 40 A, 40 V, 0.00415 ohm, 10 V, 2.4 V
Trans MOSFET N-CH 40V 40A 8-Pin PowerPAK SO EP T/R / MOSFET N-CH 40V 40A PPAK SO-8
40V 40A 39W 5m´Î@10V20A 2.4V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS
N-channel MOSFET, 40V, 50A, Vishay, PowerPAK SO-8
Power Field-Effect Transistor, 23.5A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Vishay NMOS, Vds=40 V, 23 A, PowerPAK SO-8, , 8
40V 40A 0.005 Ohm N-ch PowerPAK SO-8
MOSFET, N CH, 40V, 40A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00415ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; Operating Temperature Range:-55°C to +150°C