공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-09-09
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
관련 부품
InfineonIRFHM830DTRPBF
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
InfineonIRFHS8342TRPBF
INFINEON IRFHS8342TRPBF MOSFET Transistor, N Channel, 8.8 A, 30 V, 0.013 ohm, 10 V, 1.8 VNew
설명
유통업체에서 제공한 Infineon IRFHM830TRPBF에 대한 설명입니다.
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
Infineon SCT
Transistor: N-MOSFET; unipolar; HEXFET; 30V; 21A; 2.7W; PQFN3.3X3
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
MOSFET N-CH 30V 21A/40A PQFN "N-Channel 30 V 21A (Ta), 40A (Tc) 2.7W (Ta), 37W (Tc) Surface Mount 8-PQFN-Dual (3.3x3.3)"
IRMOSFET Power Field-Effect Transistor, 21A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, N-Ch, 30V, 40A, Qfn; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V; Product Range:- Rohs Compliant: Yes |Infineon Technologies IRFHM830TRPBF
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
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- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)21 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time9.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.155 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation37 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
On-State Resistance3.8 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.7 W
Rds On Max3.8 mΩ
Resistance6 MΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time13 ns
Turn-On Delay Time12 ns
Dimensions
Height1.05 mm
Length3.3 mm
Width3.3 mm