Infineon IRFHM830DTRPBF

Name: Infineon IRFHM830DTRPBF
Brand: Infineon
SKU: IRFHM830DTRPBF

30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS

Obsolete

제조업체 페이지 데이터시트

가격 및 재고

공인 유통업체

비공인 재고 유통업체

비공인 딜러

모든 가격 할인 보기

Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRFHM830DTRPBF	0	4K	Bulk					1.509	15h
Farnell		IRFHM830DTRPBF	0	1		1.303*	1.303*	0.618*	0.524*	0.524*	23h
Win Source		WS-IRFHM830DTRPBF	8,245	70				0.874	0.583	0.583	1d
Worldway Electronics	2	IRFHM830D	12,331	7			0.444	0.431	0.408	0.408	23h
ICPartonline		IRFHM830DTRPBF	19,250			27.000	25.650	24.300	22.950	21.600	>1wk

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

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데이터시트 및 문서

Infineon IRFHM830DTRPBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet9 페이지10년 전

Datasheet9 페이지11년 전

element14 APAC

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InfineonIRFHM830DTRPBF

InfineonIRFHM830DTR2PBF

Price @ 1000

$ 1.29

Stock

157,885

50,225

Authorized Distributors

Mount

Surface Mount

Case/Package

VQFN

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

20 A

Threshold Voltage

1.8 V

Rds On Max

4.3 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

37 W

Input Capacitance

1.797 nF

공급망

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-09-09

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-12-02

LTD Date2017-09-02

설명

유통업체에서 제공한 Infineon IRFHM830DTRPBF에 대한 설명입니다.

30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS

Infineon SCT

MOSFET, 30V, 40A, 4.3 MOHM, 13 NC QG, 1.1 OHM RG, MONOFETKY, PQFN 3.3X3.3

RS (Formerly Allied Electronics)

Synchronous MOSFET for Buck Converters | MOSFET N-CH 30V 20A PQFN

Win Source

Trans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R

Avnet

MOSFET,N CH,SCH DIODE,30V,20A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):3400µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Power Dissipation Pd:2.8W; Voltage Vgs Max:20V

element14 APAC

Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Schottky intrinsic diode with low forward voltage; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

Infineon