관련 부품
VishaySIHP24N65E-GE3
MOSFET N-CH 650V 24A TO220AB / N-Channel 650 V 24A (Tc) 250W (Tc) Through Hole TO-220AB
VishaySIHP24N65E-E3
MOSFET, N CH, 650V, 24A, TO-220AB; Transistor Polarity:N Channel; Continuous Dra
설명
유통업체에서 제공한 Vishay SIHP22N60E-GE3에 대한 설명입니다.
MOSFET, N CH, 600V, 21A, TO-220AB-3; Transistor Polarity:N Channel; Continuous D
E-Series N-Channel 600 V 227 W 0.18 O 86 nC Flange Mount Power Mosfet -TO-220AB
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220AB
Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
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기술 사양
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)21 A
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time54 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.92 nF
Max Operating Temperature150 °C
Max Power Dissipation227 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation227 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time68 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time59 ns
Turn-On Delay Time18 ns
Dimensions
Height9.01 mm
Length10.51 mm
Width4.65 mm