onsemi FDPF16N50T

N-Channel Power MOSFET, UniFETTM, 500V, 16A, 380 mΩ, TO-220F

Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220AB Rail

N-CHANNEL UNIFET MOSFET Power Field-Effect Transistor, 16A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation

MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:16A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:64A; No. of Pins:3; Pin Configuration:G(1),D(2),S(3); Power Dissipation:52W; Power, Pd:52W; Resistance, Rds on Max:0.38ohm; Resistance, Rds on Typ.:0.31ohm; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:2.4°C/W; Typ Capacitance Ciss:1495pF; Voltage, Rds Measurement:10V; Voltage, Vds Max:500V; Voltage, Vgs th Max:5V; Voltage, Vgs th Min:3V

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.