가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | SIHP24N65E-GE3 | 1,546 | 1 | |||||||||
| TTI | SIHP24N65E-GE3 | 3,000 | 50 | Tube | 4h | |||||||
| TME | SIHP24N65E-GE3 | 0 | 1 | 23h | ||||||||
| Avnet | SIHP24N65E-GE3 | 0 | 1K | 3d | ||||||||
| Future Electronics | SIHP24N65E-GE3 | 0 | 50 | Tube |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-01-09
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
VishaySIHP30N60E-GE3
MOSFET, N CH, 600V, 29A, TO-220AB-3; Transistor Polarity:N Channel; Continuous D
VishaySIHP30N60E-E3
MOSFET, N CH, 600V, 29A, TO-220AB; Transistor Polarity:N Channel; Continuous Dra
VishaySIHP22N60E-GE3
MOSFET, N CH, 600V, 21A, TO-220AB-3; Transistor Polarity:N Channel; Continuous D
설명
유통업체에서 제공한 Vishay SIHP24N65E-GE3에 대한 설명입니다.
MOSFET N-CH 650V 24A TO220AB / N-Channel 650 V 24A (Tc) 250W (Tc) Through Hole TO-220AB
E-Series N-Ch 650 V 0.145 Ohm Flange Mount High Voltage Power Mosfet - TO-220AB
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220AB
250W(Tc) 30V 4V@ 250¦ÌA 122nC@ 10V 1N 650V 145m¦¸@ 12A,10V 24A 2.74nF@100V 9.01mm
MOSFET 650V 145mOhm@10V 24A N-Ch E-SRS
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)24 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance145 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time69 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.74 nF
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation250 W
Rds On Max145 mΩ
Resistance145 mΩ
Rise Time84 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time70 ns
Turn-On Delay Time24 ns
Dimensions
Height15.49 mm
Length10.51 mm
Width4.65 mm