가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | SIHD3N50D-E3 | 0 | 3K | Tape & Reel | ||||||||
| Microchip USA | SIHD3N50D-E3 | 1,173 | 3500 | Tray | 1d | |||||||
| Component Stockers USA | SIHD3N50D-E3 | 1,951 | 3d | |||||||||
| Win Source | WS-SIHD3N50D-E3 | 4,450 | 110 | 18h | ||||||||
| Esaler Electronic | SIHD3N50D-E3 | 3,000 | 3d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-05-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-11-04
LTD Date2025-05-04
관련 부품
onsemiFQD3N50CTF
Power Field-Effect Transistor, 2.5A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
InfineonIPD50R2K0CEBTMA1
Power Field-Effect Transistor, 2.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Vishay SIHD3N50D-E3에 대한 설명입니다.
MOSFET N-CH 500V 3A DPAK / N-Channel 500 V 3A (Tc) 69W (Tc) Surface Mount TO-252AA
Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) TO-252AA
Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
TO-252-3 MOSFETs ROHS
N-CHANNEL 500V
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)3 A
Drain to Source Resistance3.2 Ω
Drain to Source Voltage (Vdss)500 V
Fall Time13 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance175 pF
Max Operating Temperature150 °C
Max Power Dissipation69 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max3.2 Ω
Rise Time9 ns
Turn-Off Delay Time11 ns
Turn-On Delay Time12 ns