공급망
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
onsemiFQD3N50CTF
Power Field-Effect Transistor, 2.5A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
VishaySIHD3N50D-E3
MOSFET N-CH 500V 3A DPAK / N-Channel 500 V 3A (Tc) 69W (Tc) Surface Mount TO-252AA
설명
유통업체에서 제공한 Vishay IRFR420APBF에 대한 설명입니다.
IRFR420A Series N-Channel 500 V 0.3 Ohm 83 W Power Mosfet - DPAK (TO-252)
POWER MOSFET Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N D-PAK 500V 3.3A; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.3A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipat
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기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)3.3 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance3 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance340 pF
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation83 W
Rds On Max3 Ω
Resistance300 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage4.5 V
Turn-Off Delay Time16 ns
Turn-On Delay Time8.1 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm