공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-12-16
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2008-06-06
LTD Date2008-12-06
관련 부품
onsemiFQD3N50CTF
Power Field-Effect Transistor, 2.5A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
VishaySIHD3N50D-E3
MOSFET N-CH 500V 3A DPAK / N-Channel 500 V 3A (Tc) 69W (Tc) Surface Mount TO-252AA
설명
유통업체에서 제공한 onsemi FQD4N50TF에 대한 설명입니다.
2.5W(Ta),45W(Tc) 5V@ 250¦ÌA 13nC@ 10V 1N 500V 2.7¦¸@ 1.3A,10V 460pF@25V DPAK
Trans MOSFET N-CH 500V 2.6A 3-Pin(2+Tab) DPAK T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Power Field-Effect Transistor
MOSFETs 500V N-Channel QFET
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)2.6 A
Current Rating2.6 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance2.7 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance460 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max2.7 Ω
Rise Time45 ns
Turn-Off Delay Time20 ns
Voltage Rating (DC)500 V