가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | SIHB22N65E-GE3 | 0 | 1 | 19h | ||||||||
| Avnet | SIHB22N65E-GE3 | 0 | 1K | 2d | ||||||||
| TTI Europe | SIHB22N65E-GE3 | 0 | 1K | Tube | 3d | |||||||
| Arrow Electronics | SIHB22N65E-GE3 | 0 | 1K | |||||||||
| Farnell | SIHB22N65E-GE3 | 0 | 1 | 19h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-05-08
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTB28NM50N
N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in D2PAK package
InfineonSPB17N80C3ATMA1
Power MOSFET, N Channel, 800 V, 17 A, 290 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount
InfineonIPB50R140CPATMA1
Trans MOSFET N-CH 550V 23A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 550V 23A TO-263
VishaySIHB6N65E-GE3
Single N-Channel 700 V 0.6 O 48 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
설명
유통업체에서 제공한 Vishay SIHB22N65E-GE3에 대한 설명입니다.
Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK
MOSFET, N CH, 650V, 22A, TO-263-3
Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 650V, 22A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Powe
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기술 사양
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time38 ns
Gate to Source Voltage (Vgs)4 V
Input Capacitance2.415 nF
Max Operating Temperature150 °C
Max Power Dissipation227 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation227 W
Rds On Max180 mΩ
Rise Time33 ns
Turn-Off Delay Time73 ns