공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-05-02
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
STMicroelectronicsSTB14NM50N
N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a D2PAK package
STMicroelectronicsSTB11N52K3
N-channel 525 V, 0.41 Ohm, 10 A SuperMESH3(TM) Power MOSFET in D2PAK package
STMicroelectronicsSTB28NM50N
N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in D2PAK package
InfineonSPB16N50C3
Mosfet Transistor, N Channel, 16 A, 560 V, 0.25 Ohm, 10 V, 3 V Rohs Compliant: Yes
설명
유통업체에서 제공한 onsemi FDB15N50에 대한 설명입니다.
N-Channel Power MOSFET, UniFETTM, 500 V, 15 A, 380 mΩ, D2PAK
N-Channel 500 V 0.38 Ohm 41 nC Surface Mount SMPS Power Mosfet -D2PAK-3
Power Field-Effect Transistor, 15A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET,N CH,500V,15A,TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:500V; On Resistance Rds(on):330mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:15A; Power Dissipation Pd:300W; Voltage Vgs Max:30V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)15 A
Current Rating15 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.85 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs3.4 V
Number of Channels1
Number of Elements1
Power Dissipation300 W
Rds On Max380 mΩ
Resistance380 mΩ
Rise Time5.4 ns
Schedule B8541290080
Threshold Voltage3.4 V
Turn-Off Delay Time26 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)500 V
Dimensions
Height5.08 mm
Length10.67 mm
Width11.33 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책