가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | SIA441DJ-T1-GE3 | 15,000 | 3K | 4d | ||||||||
| Newark | SIA441DJ-T1-GE3 | 3,000 | 1 | Cut Tape | ||||||||
| Verical | SIA441DJ-T1-GE3 | 1,497 | 29 | |||||||||
| Arrow Electronics | SIA441DJ-T1-GE3 | 1,497 | 1 | |||||||||
| Future Electronics | SIA441DJ-T1-GE3 | 3,000 | 3K | Tape & Reel |
공급망
Country of OriginUSA
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-15
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
Diodes Inc.DMG3407SSN-7
1.1W(Ta) 20V 2.1V@ 250¦ÌA 16nC@ 10 V 1P 30V 50m¦¸@ 4.1A,10V 4A 700pF@15V SC-59-3
설명
유통업체에서 제공한 Vishay SIA441DJ-T1-GE3에 대한 설명입니다.
SiA441DJ Series 40 V 12 A Surface Mount P-Channel Mosfet - PowerPAK SC-70-6L
19W(Tc) 20V 2.2V@ 250¦ÌA 35nC@ 10 V 1P 40V 47m¦¸@ 4.4A,10V 12A 890pF@20V 2.05mm*2.05mm*750¦Ìm
MOSFET Devices; VISHAY; SIA441DJ-T1-GE3; -40 V; -6.6 A; 20 V; 3.5 W
Trans MOSFET P-CH 40V 12A 6-Pin PowerPAK SC-70 EP T/R
Power Field-Effect Transistor, 12A I(D), 40V, 0.047ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
场效应管, MOSFET, P沟道, 40V, 12A, POWERPAK SC70;
FET Input Operational Amplifier
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageSC
MountSurface Mount
Number of Pins6
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance47 mΩ
Drain to Source Voltage (Vdss)-40 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance890 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation19 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs-1.2 V
Number of Channels1
Number of Elements1
Power Dissipation3.5 W
Rds On Max47 mΩ
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time40 ns
Dimensions
Height800 µm
Length2.05 mm
Width2.05 mm