가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | DMN3033LSN-7 | 60,000 | 3K | 5h | ||||||||
| Newark | DMN3033LSN-7 | 2,710 | 5 | Cut Tape | ||||||||
| Verical | DMN3033LSN-7 | 60,000 | 3K | |||||||||
| Arrow Electronics | DMN3033LSN-7 | 9,000 | 3K | |||||||||
| TME | DMN3033LSN-7 | 610 | 1 | 1d |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-28
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
Diodes Inc.DMG3407SSN-7
1.1W(Ta) 20V 2.1V@ 250¦ÌA 16nC@ 10 V 1P 30V 50m¦¸@ 4.1A,10V 4A 700pF@15V SC-59-3
Diodes Inc.DMP3030SN-7
Power MOSFET, P Channel, 30 V, 700 mA, 250 Milliohms, SC-59, 3 Pins, Surface Mount
설명
유통업체에서 제공한 Diodes Inc. DMN3033LSN-7에 대한 설명입니다.
N-Channel 30 V 30 mOhm 10.5 nC Enhancement Mode Mosfet - SC-59
Mosfet, N-Ch, 30V, 6A, Sc-59 Rohs Compliant: Yes |Diodes Inc. DMN3033LSN-7
Power MOSFET, N Channel, 30 V, 6 A, 0.025 ohm, SC-59, Surface Mount
Trans MOSFET N-CH 30V 6A Automotive 3-Pin SC-59 T/R
Power Field-Effect Transistor, 6A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
1.4W(Ta) 20V 2.1V@ 250¦ÌA 10.5nC@ 5 V 1N 30V 30m¦¸@ 6A,10V 6A 755pF@10V SC-59-3 3mm*1.6mm*1.15mm
MOSFETs - Low Threshold Voltage N-Channel
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSC
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Continuous Drain Current (ID)6 A
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance755 pF
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.4 W
Rds On Max30 mΩ
Resistance30 mΩ
Rise Time7 ns
Schedule B8541290080
Turn-Off Delay Time63 ns
Turn-On Delay Time11 ns
Dimensions
Height1.1 mm
Length3 mm
Width1.6 mm