가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | SI1302DL-T1-E3 | 0 | 5 | 18h | ||||||||
| RS (Formerly Allied Electronics) | SI1302DL-T1-E3 | 0 | 3K | Bulk | 21h | |||||||
| Avnet | SI1302DL-T1-E3 | 0 | 3K | 2d | ||||||||
| TTI Asia | SI1302DL-T1-E3 | 문의하기 | 8h | |||||||||
| TTI Europe | SI1302DL-T1-E3 | 0 | 3K | Tape & Reel | 8h |
대체 부품
Price @ 1000
$ 0.219
$ 0.143
Stock
1,284,013
488,160
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SC
-
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
600 mA
600 mA
Threshold Voltage
1 V
-
Rds On Max
480 mΩ
480 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
310 mW
-
Input Capacitance
-
-
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-12-02
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2025-08-31
LTD Date2025-12-31
관련 부품
VishaySI1028X-T1-GE3
VISHAY SI1028X-T1-GE3 Dual MOSFET, Dual N Channel, 480 mA, 30 V, 0.54 ohm, 10 V, 1 V
Diodes Inc.DMP3030SN-7
Power MOSFET, P Channel, 30 V, 700 mA, 250 Milliohms, SC-59, 3 Pins, Surface Mount
Diodes Inc.DMG3407SSN-7
1.1W(Ta) 20V 2.1V@ 250¦ÌA 16nC@ 10 V 1P 30V 50m¦¸@ 4.1A,10V 4A 700pF@15V SC-59-3
설명
유통업체에서 제공한 Vishay SI1302DL-T1-E3에 대한 설명입니다.
SI1302DL-T1-E3 N-CHANNEL MOSFET TRANSISTOR, 0.6 A, 30 V, 3-PIN SOT-323
Single N-Channel 30 V 0.48 Ohms Surface Mount Power Mosfet - SC-70-3
Trans MOSFET N-CH 30V 0.6A 3-Pin SC-70 T/R / MOSFET N-CH 30V 600MA SOT323-3
MOSFET, N, 3-SC-70; Transistor Polarity:N Channel; Continuous Drain Current Id:640mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):480mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:310mW; Transistor Case Style:SC-70; No. of Pins:3; Current Id Max:640mA; Package / Case:SC-70; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
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기술 사양
Physical
Case/PackageSC
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight6.208546 mg
Technical
Continuous Drain Current (ID)600 mA
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance480 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation280 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation310 mW
Rds On Max480 mΩ
Resistance480 mΩ
Rise Time8 ns
Schedule B8541210080
Threshold Voltage1 V
Turn-Off Delay Time8 ns
Turn-On Delay Time5 ns
Dimensions
Height1 mm
Length2 mm
Width1.25 mm