관련 부품
InfineonIRFTS8342TRPBF
30V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS
설명
유통업체에서 제공한 Vishay SI3421DV-T1-GE3에 대한 설명입니다.
P-Channel 20 V 0.0192 Ohm 69 nC Surface Mount Power Mosfet - TSOP-6
VISHAY SI3421DV-T1-GE3. MOSFET, P CHANNEL, -30V, -8A, TSOP-6
P-CHANNEL 30-V (D-S) TSOP-6 P-CHANNEL GEN III MOSFET, 19.2 M
Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
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기술 사양
Physical
Case/PackageTSOP
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight19.986414 mg
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance19.2 mΩ
Drain to Source Voltage (Vdss)-30 V
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.58 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation4.2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2 W
Rds On Max19.2 mΩ
Rise Time9 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time55 ns
Turn-On Delay Time7 ns
Dimensions
Height1.1 mm