공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-06-03
LTD Date2014-12-03
관련 부품
VishaySI3460DDV-T1-GE3
Transistor: N-MOSFET; unipolar; 20V; 7.9A; 0.028ohm; 2.7W; -55+150 deg.C; SMD; TSOP6
VishaySI3433CDV-T1-E3
Single P-Channel 20 V 38 mOhm Surface Mount TrenchFET® Power Mosfet - TSOP-6
InfineonBSL207SPL6327HTSA1
MOSFET P-CH 20V 6A TSOP-6 / P-Channel 20 V 6A (Ta) 2W (Ta) Surface Mount PG-TSOP6-6
InfineonBSL202SNH6327XTSA1
Mosfet, N-Ch, 20V, 150Deg C, 2W Rohs Compliant: Yes |Infineon Technologies BSL202SNH6327XTSA1
설명
유통업체에서 제공한 Infineon BSL802SNL6327HTSA1에 대한 설명입니다.
MOSFET N-CH 20V 7.5A TSOP6
7500 mA 20 V N-CHANNEL Si SMALL SIGNAL MOSFET
Small Signal Field-Effect Transistor, 7.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
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- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTSOP
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)7.5 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time5.5 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.347 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2 W
Rds On Max22 mΩ
Rise Time30 ns
Turn-Off Delay Time20 ns
Turn-On Delay Time10 ns
Dimensions
Height1.1 mm