대체 부품
Price @ 1000
$ 1.633
$ 1.651
$ 1.651
Stock
168,367
148,795
148,795
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
TO-263-3
TO-263-3
TO-263-3
Drain to Source Voltage (Vds)
60 V
60 V
60 V
Continuous Drain Current (ID)
50 A
50 A
50 A
Threshold Voltage
2 V
-
-
Rds On Max
28 mΩ
28 mΩ
28 mΩ
Gate to Source Voltage (Vgs)
10 V
10 V
10 V
Power Dissipation
3.7 W
3.7 W
3.7 W
Input Capacitance
3.3 nF
3.3 nF
3.3 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-05-01
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
InfineonIRF4905STRLPBF
Power MOSFET, P Channel, 55 V, 70 A, 20 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount
설명
유통업체에서 제공한 Vishay IRLZ44SPBF에 대한 설명입니다.
N-Channel 60 V 150 W 66 nC Power Mosfet Surface Mount - D2PAK-3
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, 60V, 50A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.028ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Diss
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)50 A
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vds)60 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance3.3 nF
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation3.7 W
Rds On Max28 mΩ
Resistance28 mΩ
Rise Time230 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time42 ns
Turn-On Delay Time17 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.02 mm