onsemi NDB6060L

N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 48A, 25mΩ

N-Channel 60 V 0.025 Ohm SMD Enhancement Mode Transistor - TO-263AB

Trans MOSFET N-CH 60V 48A 3-Pin(2+Tab) D2PAK T/R

Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:60V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:100W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Capacitance Ciss Typ:1630pF; Current Id Max:48A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulse Current Idm:144A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.