공급망
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2024-11-18
LTD Date2025-05-18
설명
유통업체에서 제공한 Vishay IRLD024PBF에 대한 설명입니다.
Single N-Channel 60 V 0.1 Ohms Through Hole Power Mosfet - HVMDIP-4
MOSFET N-CH 60V 2.5A 4-DIP / Trans MOSFET N-CH 60V 2.5A 4-Pin HVMDIP
Transistor: unipolar, N-MOSFET; 60V; 2.5A; 1.3W; DIP4
POWER MOSFET Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N Channel Mosfet, 60V, 2.5A, Hd-1; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.5A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
MOSFET, N, LOGIC, DIL; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DIP; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.5A; Current Temperature:25°C; Device Marking:IRLD024PBF; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:DIP; Power Dissipation Pd:1W; Power Dissipation Pd:1W; Pulse Current Idm:20A; Row Pitch:7.62mm; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageDIP
MountThrough Hole
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)2.5 A
Current Rating2.5 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance870 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation1.3 W
Rds On Max100 mΩ
Recovery Time260 ns
Resistance100 mΩ
Rise Time110 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time23 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)60 V
Dimensions
Height4.57 mm
Length5 mm
Width6.29 mm