설명
유통업체에서 제공한 Vishay IRLD014PBF에 대한 설명입니다.
Single N-Channel 60 V 0.2 Ohms Through Hole Power Mosfet - HVMDIP-4
MOSFET N-CH 60V 1.7A 4-DIP | Siliconix / Vishay IRLD014PBF
N Channel Mosfet, 60V, 1.7A, Hd-1; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.7A; On Resistance Rds(On):0.2Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
MOSFET, N, LOGIC, DIL; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:1.7A; Resistance, Rds On:0.2ohm; Voltage, Vgs Rds on Measurement:5V; Voltage, Vgs th Typ:2V; Case Style:DIP; Termination Type:Through Hole; Current, Idm Pulse:14A; Lead Spacing:2.54mm; No. of Pins:4; Power Dissipation:1W; Power, Pd:1W; Row Pitch:7.62mm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:60V
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기술 사양
Physical
Case/PackageDIP
MountThrough Hole
Number of Pins4
Number of Terminals3
Technical
Continuous Drain Current (ID)1.7 A
Current Rating1.7 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance400 pF
Max Operating Temperature175 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation1.3 W
Rds On Max200 mΩ
Recovery Time130 ns
Resistance200 mΩ
Rise Time110 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time17 ns
Turn-On Delay Time9.3 ns
Voltage Rating (DC)60 V
Dimensions
Height3.3782 mm
Length6.2738 mm
Width5.0038 mm