가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFD024PBF | 0 | 2500 | Bulk | 6h | |||||||
| TTI Europe | IRFD024PBF | 0 | 100 | Tube | 18h | |||||||
| Farnell | IRFD024PBF | 0 | 1 | 15h | ||||||||
| element14 APAC | IRFD024PBF | 0 | 1 | 1d | ||||||||
| Win Source | WS-IRFD024PBF | 2,599 | 9 | 15h |
공급망
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Vishay IRFD024PBF에 대한 설명입니다.
Single N-Channel 60 V 0.1 Ohms Through Hole Power Mosfet - HVMDIP-4
MOSFET N-CH 60V 2.5A 4-DIP | Siliconix / Vishay IRFD024PBF
POWER MOSFET Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, DIL; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DIP; No. of Pins:4; Current Id Max:2.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:DIP; Power Dissipation Pd:1.3W; Power Dissipation Pd:1.3W; Pulse Current Idm:19A; Row Pitch:7.62mm; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
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Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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기술 사양
Physical
Case/PackageDIP
MountThrough Hole
Number of Pins4
Number of Terminals3
Technical
Continuous Drain Current (ID)2.5 A
Current Rating2.5 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time58 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance640 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation1.3 W
Rds On Max100 mΩ
Recovery Time180 ns
Resistance100 mΩ
Rise Time58 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time25 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)60 V
Dimensions
Height4.57 mm
Length5 mm
Width6.29 mm