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Price @ 1000
$ 0.515
$ 0.33
Stock
675,794
83,156
Authorized Distributors
6
6
Mount
Through Hole
-
Case/Package
TO-251-3
-
Drain to Source Voltage (Vdss)
400 V
-
Continuous Drain Current (ID)
1.7 A
1.7 A
Threshold Voltage
4 V
-
Rds On Max
3.6 Ω
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
2.5 W
-
Input Capacitance
170 pF
-
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 5 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
관련 부품
InfineonIPU50R3K0CEBKMA1
18W(Tc) 20V 3.5V@ 30¦ÌA 4.3nC@ 10 V 1N 500V 3¦¸@ 400mA,13V 1.7A 84pF@100V IPAK,TO-251
설명
유통업체에서 제공한 Vishay IRFU310PBF에 대한 설명입니다.
Single N-Channel 400 V 3.6 Ohms Through Hole Power Mosfet - IPAK (TO-251)
POWER MOSFET Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MOSFET, N, 400V, 1.7A, I-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 3.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Di
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight329.988449 mg
Technical
Continuous Drain Current (ID)1.7 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance3.6 Ω
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance170 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation2.5 W
Rds On Max3.6 Ω
Resistance3.6 Ω
Rise Time9.9 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time21 ns
Turn-On Delay Time7.9 ns
Dimensions
Height6.22 mm
Length6.73 mm
Width2.39 mm