가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IPU50R3K0CEBKMA1 | 24,289 | 20h | |||||||||
| Farnell | IPU50R3K0CEBKMA1 | 0 | 5 | 20h | ||||||||
| Microchip USA | IPU50R3K0CEBKMA1 | 420 | 3500 | Tube | 14h | |||||||
| Verical | IPU50R3K0CEBKMA1 | 15,000 | 2667 | |||||||||
| Worldway Electronics | IPU50R3K0CEBKMA1 | 10,318 | 7 | Tube | 20h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-12-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-31
LTD Date2019-02-28
관련 부품
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STMICROELECTRONICS STD3NK50Z-1 MOSFET Transistor, N Channel, 1.15 A, 500 V, 2.8 ohm, 10 V, 3.75 V
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MOSFET N-CH 650V 3.1A TO251 / N-Channel 650 V 3.1A (Tc) 28W (Tc) Through Hole TO-251
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MOSFET N-CH 650V 4.3A TO251 / N-Channel 650 V 4.3A (Tc) 37W (Tc) Through Hole TO-251
설명
유통업체에서 제공한 Infineon IPU50R3K0CEBKMA1에 대한 설명입니다.
Trans MOSFET N-CH 550V 1.7A 3-Pin TO-251 Tube
Power Field-Effect Transistor, 1.7A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Mosfet, N-Ch, 500V, 2.6A, To-251Aa; Transistor Polarity:n Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:500V; On Resistance Rds(On):2.7Ohm; Rds(On) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1.7 A
Drain to Source Breakdown Voltage550 V
Drain to Source Resistance3 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time49 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance84 pF
Max Operating Temperature150 °C
Max Power Dissipation18 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max3 Ω
Rise Time5.8 ns
Turn-Off Delay Time23 ns
Turn-On Delay Time7.3 ns
Dimensions
Height6.22 mm
Length6.73 mm
Width2.41 mm