공급망
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-10-31
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTW7N105K5
Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
STMicroelectronicsSTW10N105K5
Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
STMicroelectronicsSTW23N85K5
N-channel 850 V, 0.2 Ohm typ., 19 A MDmesh K5 Power MOSFET in a TO-247 package
설명
유통업체에서 제공한 Vishay IRFPG50PBF에 대한 설명입니다.
IRFPG50PBF N-CHANNEL MOSFET TRANSISTOR, 6.1 A, 1000 V, 3-PIN TO-247AC
Trans MOSFET N-CH 1KV 6.1A 3-Pin(3+Tab) TO-247AC / MOSFET N-CH 1000V 6.1A TO-247AC
Power Field-Effect Transistor, 6.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
N CHANNEL MOSFET, 1KV, 6.1A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:6.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET, N, 1000V, 6.1A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:1000V; Current, Id Cont:6A; Resistance, Rds On:2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:24A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:180W; Power, Pd:180W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.65°C/W; Transistors, No. of:1; Voltage, Vds:1000V; Voltage, Vds Max:1000V
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기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)6.1 A
Current Rating6.1 A
Drain to Source Breakdown Voltage1 kV
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vdss)1 kV
Element ConfigurationSingle
Fall Time36 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.8 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage1 kV
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation190 W
Rds On Max2 Ω
Recovery Time950 ns
Resistance2 Ω
Rise Time35 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time130 ns
Turn-On Delay Time19 ns
Voltage Rating (DC)1 kV
Dimensions
Height24.99 mm
Length15.87 mm
Width5.31 mm