공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-07-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-11-04
LTD Date2025-05-04
관련 부품
STMicroelectronicsSTW7N105K5
Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
STMicroelectronicsSTW10N105K5
Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
onsemiFCH067N65S3-F155
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-247
설명
유통업체에서 제공한 Vishay IRFPF40PBF에 대한 설명입니다.
Single N-Channel 900 V 2.5 Ohms Flange Mount Power Mosfet - TO-247AC
Mosfet N-Channel 900V Rohs Compliant: No
Power Field-Effect Transistor, 4.7A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Vishay NMOS, Vds=900 V, 4.7 A, TO-247AC
MOSFET, N-CH, 900V, 4.7A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 2.5ohm; ; Available until stocks are exhausted Alternative available
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
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- Vishay Draloric
기술 사양
Physical
Case/PackageTO-247-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)4.7 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.6 nF
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
Output Voltage800 V
PackagingBulk
Power Dissipation150 W
Rds On Max2.5 Ω
Resistance2.5 Ω
Rise Time36 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time110 ns
Turn-On Delay Time15 ns
Dimensions
Height20.7 mm
Length15.87 mm
Width5.31 mm