공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-07-21
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTW10N105K5
Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
onsemiFCH067N65S3-F155
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-247
STMicroelectronicsSTW7N105K5
Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Vishay IRFPF50PBF에 대한 설명입니다.
Single N-Channel 900 V 1.6 Ohms Flange Mount Power Mosfet - TO-247AC
IRFPF50PBF N-CHANNEL MOSFET TRANSISTOR, 6.7 A, 900 V, 3-PIN TO-247AC
Power Field-Effect Transistor, 6.7A I(D), 900V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N, 900V, 6.7A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.65°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:190W; Power Dissipation Pd:190W; Pulse Current Idm:27A; Termination Type:Through Hole; Voltage Vds:900V; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
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기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)6.7 A
Current Rating6.7 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance1.6 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.9 nF
Max Operating Temperature150 °C
Max Power Dissipation180 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation190 W
Rds On Max1.6 Ω
Recovery Time920 ns
Resistance1.6 Ω
Rise Time34 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time130 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)900 V
Dimensions
Height20.7 mm
Length15.87 mm
Width5.31 mm