대체 부품
Price @ 1000
$ 0.711
$ 0.71
$ 0.71
Stock
53,782
136,977
136,977
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount, Through Hole
Surface Mount, Through Hole
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
-
-60 V
-60 V
Continuous Drain Current (ID)
6.7 A
6.7 A
6.7 A
Threshold Voltage
-
-
-
Rds On Max
500 mΩ
500 mΩ
500 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
3.7 W
3.7 W
3.7 W
Input Capacitance
270 pF
270 pF
270 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1993-09-01
Lifecycle StatusProduction (Last Updated: 5 months ago)
설명
유통업체에서 제공한 Vishay IRF9Z14STRLPBF에 대한 설명입니다.
Trans MOSFET P-CH Si 60V 6.7A 3-Pin(2+Tab) D2PAK T/R
P-Channel 60 V 500 mOhm 6.7 A 3.7 W Surface Mount Power MOSFET - D2PAK(TO-263)
MOSFET P-CH 60V 6.7A D2PAK
Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET P-CHANNEL 60V
Field Effect Tube (MOSFET)
P-CH 60V 6.7A 500mOhm SOT-23
P-CH SINGLE -60V TO263
PCHAN IRF9Z14STRLPBF
vpe: 800/tr/dpak
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)6.7 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance500 mΩ
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance270 pF
Max Operating Temperature175 °C
Max Power Dissipation43 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.7 W
Rds On Max500 mΩ
Rise Time63 ns
Turn-Off Delay Time10 ns
Turn-On Delay Time11 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm