공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-06-23
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRF520NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 9.7A;TO-220AB;PD 48W;VGS +/-20V
InfineonIRF530NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;TO-220AB;PD 70W;gFS 12S
InfineonIRL520NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS +/-16V
설명
유통업체에서 제공한 Vishay IRF9520PBF에 대한 설명입니다.
Single P-Channel 100 V 0.6 Ohms Flange Mount Power Mosfet - TO-220AB
Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
P Channel Mosfet, -100V, -6.8A, To-220; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:6.8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Msl:- Rohs Compliant: No |Vishay IRF9520PBF.
MOSFET, P, TO-220; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-100V; Current, Id Cont:6A; Resistance, Rds On:0.6ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:24A; Lead Spacing:2.54mm; No. of Pins:3; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:40W; Power, Pd:40W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:100V
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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- Vishay General Semiconductor - Diodes Division
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기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)6.8 A
Current Rating-6.8 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance390 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation60 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-2 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation60 W
Rds On Max600 mΩ
Recovery Time200 ns
Resistance600 mΩ
Rise Time29 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time21 ns
Turn-On Delay Time9.6 ns
Voltage Rating (DC)-100 V
Dimensions
Height19.89 mm
Length10.41 mm
Width4.7 mm