공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRL520NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS +/-16V
설명
유통업체에서 제공한 Vishay IRL510PBF에 대한 설명입니다.
Transistor MOSFET N-CH 100V 5.6A 3-Pin (3+Tab) TO-220AB
Single N-Channel 100 V 0.54 Ohms Flange Mount Power Mosfet - TO-220-3
Power MOSFET, N Channel, 100 V, 5.6 A, 0.54 ohm, TO-220AB, Through Hole
Power MOSFET Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 100V, 5.6A To-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:5.6A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:5V; Gate Source Threshold Voltage Max:2V; Msl:- Rohs Compliant: No |Vishay IRL510PBF.
MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:43W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:5.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:43W; Power Dissipation Pd:43W; Pulse Current Idm:18A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
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기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)5.6 A
Current Rating5.6 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance540 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance250 pF
Max Operating Temperature175 °C
Max Power Dissipation43 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation43 W
Rds On Max540 mΩ
Recovery Time130 ns
Resistance540 mΩ
Rise Time47 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time16 ns
Turn-On Delay Time9.3 ns
Voltage Rating (DC)100 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm