공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1995-09-01
Lifecycle StatusProduction (Last Updated: 1 month ago)
LTB Date2014-01-09
LTD Date2014-07-09
관련 부품
InfineonIRF9530NPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;TO-220AB;PD 79W;VGS +/-20V
InfineonIRL530NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 17A;TO-220AB;PD 79W;VGS +/-16V
설명
유통업체에서 제공한 Infineon IRF530NPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;TO-220AB;PD 70W;gFS 12S
Transistor: N-MOSFET; unipolar; 100V; 17A; 0.09ohm; 70W; -55+175 deg.C; THT; TO220
Transistor MOSFET N Channel 100 Volt 17 Amp 3-Pin 3+ Tab TO-220AB
Infineon Technologies N channel HEXFET power MOSFET, 100 V, 17 A, TO-220, IRF530NPBF
Single N-Channel 100 V 90 mOhm 37 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Transistor MOSFET N-Ch. 17A/100V TO220 IRF 530 N PBF
Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole
Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220AB Tube
HEXFET POWER MOSFET Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance920 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation63 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance90 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation60 W
Rds On Max90 mΩ
Recovery Time140 ns
Resistance90 MΩ
Rise Time22 ns
Schedule B8541290080
TerminationThrough Hole
Turn-Off Delay Time35 ns
Turn-On Delay Time9.2 ns
Voltage Rating (DC)100 V
Dimensions
Height19.15 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm