가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | IRF840ASTRLPBF | 800 | 800 | |||||||||
| Arrow Electronics | IRF840ASTRLPBF | 800 | 800 | |||||||||
| TTI | IRF840ASTRLPBF | 2,400 | 800 | Tape & Reel | 4h | |||||||
| TME | IRF840ASTRLPBF | 0 | 800 | 23h | ||||||||
| Newark | IRF840ASTRLPBF | 0 | 800 | Tape & Reel |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTB9NK50ZT4
STB9NK50ZT4 N-CHANNEL MOSFET TRANSISTOR, 7.2 A, 500 V, 3-PIN D2PAK
STMicroelectronicsSTB10NK60ZT4
Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 115W; -55+150 deg.C; SMD; TO263 (D2PAK)
설명
유통업체에서 제공한 Vishay IRF840ASTRLPBF에 대한 설명입니다.
Single N-Channel 500 V 0.85 Ohm Surface Mount Power MosFet - D2PAK-3
Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK T/R
MOSFET Devices; VISHAY; IRF840ASTRLPBF; 500 V; 8 A; 30 V; 3.1 W
Mosfet N-Channel 500V Rohs Compliant: No |Vishay IRF840ASTRLPBF
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
NCHAN, SMD-220, 500V IRF840ASTRLPBF
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance850 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.018 nF
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.1 W
Rds On Max850 mΩ
Resistance850 mΩ
Rise Time23 ns
Schedule B8541290080
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm