공급망
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-02-01
Lifecycle StatusProduction (Last Updated: 7 months ago)
관련 부품
STMicroelectronicsSTB9NK50ZT4
STB9NK50ZT4 N-CHANNEL MOSFET TRANSISTOR, 7.2 A, 500 V, 3-PIN D2PAK
STMicroelectronicsSTB10NK60ZT4
Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 115W; -55+150 deg.C; SMD; TO263 (D2PAK)
설명
유통업체에서 제공한 Vishay IRF840SPBF에 대한 설명입니다.
Single N-Channel 400 V 0.85 Ohms Surface Mount Power Mosfet - D2PAK
Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N Channel Mosfet, 500V, 8A, D2-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:8A; On Resistance Rds(On):0.85Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 8 / Drain-Source Voltage (Vds) V = 500 / ON Resistance (Rds(on)) mOhm = 850 / Gate-Source Voltage V = 20 / Fall Time ns = 20 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 49 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = DDPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 125
MOSFET, N, 500V, 8A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Alternate Case Style:D2-PAK; Current Id Max:8A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; Power Dissipation on 1" Sq. PCB:3.1W; Pulse Current Idm:32A; SMD Marking:IRF840S; Termination Type:Surface Mount Device; Voltage Vds:500V; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance850 mΩ
Drain to Source Voltage (Vdss)500 V
Dual Supply Voltage500 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation3.1 W
Rds On Max850 mΩ
Resistance850 mΩ
Rise Time23 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2 V
Turn-Off Delay Time49 ns
Turn-On Delay Time14 ns
Dimensions
Height5.08 mm
Length10.67 mm
Width9.65 mm