유통업체에서 제공한 STMicroelectronics STB10NK60ZT4에 대한 설명입니다.
Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 115W; -55+150 deg.C; SMD; TO263 (D2PAK)
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in D2PAK package
Transistor MOSFET N-CH 600V 10A 3-Pin (2+Tab) D2PAK T/R
STB10NK60ZT4 N-CHANNEL MOSFET TRANSISTOR, 10 A, 600 V, 3-PIN D2PAK
Power MOSFET, N Channel, 600 V, 4.5 A, 0.65 ohm, TO-263 (D2PAK), Surface Mount
115W(Tc) 30V 4.5V@ 250¦ÌA 70nC@ 10 V 1N 600V 750m¦¸@ 4.5A,10V 10A 1.37nF@25V D2PAK
N-Channel 600 V 0.75 Ohm Zener Protected Power MosFet - I2PAK
N-CHANNEL 600V-0.65 OHM-10A-D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 600V, 10A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.65ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Po
Mosfet, N Channel, 600V, 10A, D2Pak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:4.5A; Tensión Drenaje-Fuente Vds:600V; Resistencia De Activación Rds(On):650Mohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STB10NK60ZT4