공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1983-08-26
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2015-11-20
LTD Date2016-05-20
설명
유통업체에서 제공한 Vishay IRF730에 대한 설명입니다.
Power Field-Effect Transistor, 5.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 400V 5.5A 3-Pin (3+Tab) TO-220AB
Single-Gate MOSFET Transistors 400V Sgl N-Channel HEXFET
Vishay IRF730 MOSFET N Channel 5.5A 400V TO220
74W(Tc) 20V 4V@ 250µA 38nC@ 10 V 1individualNChannel 400V 1Ω@ 3.3A,10V 700pF@25V TO-220AB Through hole mounting
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)5.5 A
Current Rating5.5 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance1 Ω
Drain to Source Voltage (Vds)400 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance700 pF
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation74 W
Rds On Max1 Ω
Rise Time15 ns
Turn-Off Delay Time38 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)400 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm