공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-07-02
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
VishaySIHP6N40D-GE3
MOSFET, N-CH, 400V, 6A, TO-220AB; Transistor Polarity:N Channel; Continuous Drai
설명
유통업체에서 제공한 Vishay IRF730APBF에 대한 설명입니다.
Single N-Channel 400 V 1 Ohm Flange Mount Power MosFet - TO-220AB
Trans MOSFET N-CH 400V 5.5A 3-Pin (3+Tab) TO-220AB
MOSFET N-CH 400V 5.5A TO-220AB | Siliconix / Vishay IRF730APBF
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 400V, 5.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:400V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.5A; Junction to Case Thermal Resistance A:1.7°C/W; Package / Case:TO-220AB; Power Dissipation Pd:74W; Power Dissipation Pd:74W; Pulse Current Idm:22A; Termination Type:Through Hole; Voltage Vds Typ:400V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V
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기술 사양
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)5.5 A
Current Rating5.5 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance1 Ω
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance600 pF
Max Operating Temperature150 °C
Max Power Dissipation74 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Nominal Vgs4.5 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation74 W
Rds On Max1 Ω
Recovery Time550 ns
Resistance1 Ω
Rise Time22 ns
Schedule B8541290080
Threshold Voltage4.5 V
Turn-Off Delay Time20 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)400 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm