공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-02-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-11-04
LTD Date2025-05-04
설명
유통업체에서 제공한 Vishay IRF624SPBF에 대한 설명입니다.
MOSFET POWER N-CHANNEL 1.1 OHMS (MAX.) @ DEGC 250 V (MIN.) @ DEGC | Vishay PCS IRF624SPBF
Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) D2PAK
IRF624S Series N-Channel 250 V 1.1 Ohms Surface Mount Power Mosfet - TO-263
POWER MOSFET Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.4A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 1.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 4.4 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) Ohm = 1.1 / Gate-Source Voltage V = 20 / Fall Time ns = 12 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = DDPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 50
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기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)4.4 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance1.1 Ω
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance260 pF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation3.1 W
Rds On Max1.1 Ω
Resistance1.1 Ω
Rise Time13 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time20 ns
Turn-On Delay Time7 ns
Dimensions
Height4.83 mm
Length10.41 mm
Width9.65 mm