공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonIRFS23N20DTRLP
N CH SMPS MOSFET, NEXFET, 200V, 24A, D2PAK; Transistor Polarity:N Channel; Conti
설명
유통업체에서 제공한 onsemi FQB19N20LTM에 대한 설명입니다.
N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 21 A, 140 mΩ, D2PAK
N-Channel 200 V 0.14 Ohm Surface Mount Mosfet - D2PAK-3
Power Field-Effect Transistor, 21A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)21 A
Current17 A
Current Rating21 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time180 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation3.13 W
Rds On Max140 mΩ
Resistance140 MΩ
Rise Time300 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time130 ns
Turn-On Delay Time35 ns
Voltage200 V
Voltage Rating (DC)200 V
Dimensions
Height5.08 mm
Length10.67 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책