가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Mouser | 844-IRL620STRLPBF | 187 | 1 | Tape & Reel | ||||||||
| Win Source | WS-IRL620STRLPBF | 160,000 | 185 | 4h | ||||||||
| Aztech | IRL620STRLPBF | 862 | 1d | |||||||||
| Epart123 | IRL620STRLPBF | 1,600 | 3200 | 5d | ||||||||
| Shenzhen Glow Technology Co., Ltd | 2041424 | 문의하기 | 10 | >1w |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-05-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
관련 부품
설명
유통업체에서 제공한 Vishay IRL620STRLPBF에 대한 설명입니다.
Single N-Channel 200 V 1 Ohm 16 nC 3.1 W Silicon SMT Mosfet - TO-263-3
Trans MOSFET N-CH 200V 5.2A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:5.2A; On Resistance, Rds(on):800mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SMD-220 ;RoHS Compliant: Yes
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)5.2 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance360 pF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation3.1 W
Rds On Max800 mΩ
Rise Time31 ns
Turn-Off Delay Time18 ns
Turn-On Delay Time4.2 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm