공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1984-10-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTF45N10F7
N-channel 100 V, 0.0145 Ohm typ., 30 A STripFET F7 Power MOSFET in TO-220FP package
Rochester ElectronicsIRFI4510GPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB FullPak, FULLPAK220-3, RoHS
설명
유통업체에서 제공한 Vishay IRF540에 대한 설명입니다.
N-channel TrenchMOS transistor | MOSFET N-CH 100V 28A TO-220AB
N-CHANNEL MOSFET, HIGH CURRENT, LOW ON-RESISTANCE, FAST SWITCHING, IRF SERIES
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:28A; On-Resistance, Rds(on):77mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Continuous Drain Current - 100 Deg C:20A RoHS Compliant: No
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기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)28 A
Current28 A
Current Rating28 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance77 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time43 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.7 nF
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation125 W
Rds On Max77 mΩ
Rise Time44 ns
Turn-Off Delay Time53 ns
Turn-On Delay Time11 ns
Voltage100 V
Voltage Rating (DC)100 V
Dimensions
Height9.01 mm
Length10.51 mm
Width4.7 mm