Infineon IRFI540NPBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.052Ohm;ID 20A;TO-220 Full-Pak;PD 54W

Single N-Channel 100 V 0.052 Ohm 94 nC HEXFET® Power Mosfet - TO-220-3FP

100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS

Power MOSFET, N Channel, 100 V, 20 A, 0.052 ohm, TO-220FP, Through Hole

Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-220FP

MOSFET Operating temperature: -55...175 °C Housing type: TO-220FP Polarity: N Power dissipation: 42 W

HEXFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

N Channel Mosfet, 100V, 20A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRFI540NPBF.

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

MOSFET, N, 100V, 18A, TO-220FP; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:18A; Resistance, Rds On:0.052ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220FP; Termination Type:Through Hole; Current, Idm Pulse:110A; No. of Pins:3; Power Dissipation:42W; Power, Pd:42W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2.8°C/W; Transistors, No. of:1; Voltage, Isolation:2.5kV; Voltage, Vds Max:100V