가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | TK35N65W,S1F | 0 | 30 | 4d | ||||||||
| Arrow Electronics | TK35N65W,S1F | 0 | 30 | |||||||||
| Mouser | 757-TK35N65WS1F | 6 | 1 | Tube | ||||||||
| Worldway Electronics | TK35N65W,S1F | 16,258 | 7 | Tube | 16h | |||||||
| UnikeyIC | TK35N65W,S1F | 6 | 1 | Tube | 9h |
관련 부품
onsemiFCH067N65S3-F155
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-247
STMicroelectronicsSTWA45N65M5
N-channel 650 V, 0.067 Ohm typ., 35 A MDmesh M5 Power MOSFET in TO-247 long leads package
VishaySIHS36N50D-E3
MOSFET, N-CH, 500V, 36A, SUPER-247; Transistor Polarity:N Channel; Continuous Dr
STMicroelectronicsSTW48N60M2
N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO-247 package
설명
유통업체에서 제공한 Toshiba TK35N65W,S1F에 대한 설명입니다.
X35 Pb-F Power Mosfet Transistor To-247(Os) Moq=2000 Pd=270W F=1Mhz
Trans MOSFET N-CH Si 650V 35A 3-Pin(3+Tab) TO-247 Tube
MOSFET MOSFET NChannel 068ohm DTMOS
N-Channel 650 V 35A (Ta) 270W (Tc) Through Hole TO-247
Power Field-Effect Transistor, 35A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
270W(Tc) 30V 3.5V@2.1mA 100nC@ 10 V 1N 650V 80m¦¸@ 17.5A,10V 35A 4.1nF@300V TO-247 15.94mm*5.02mm*20.95mm
제조업체 별칭
Toshiba에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Toshiba는 다음 이름으로도 알려져 있습니다:
- TOSH
- TOS
- Toshiba Semiconductor and Storage
- TOSHIB
- SMK
- TOSHIBA CORP
- TOSHI
- TSENG
- TOSHIBA CORPORATION
- Toshiba America Electronic Components
- TSH
- Toshiba Memory America Inc
- MARKTECH OPTOELECTRONICS
- TOSHIBA ELECTRONICS
- Toshiba Electronic Devices and Storage Corporation
- Toshiba America
- TOSHIBA ELECTRONIC COMPONENTS
- Toshiba Semiconductor
- Toshiba Lifestyle Products
- Toshiba America Electronic Components Inc
- TOSHIBA-PB FREE
- TOSHIBA SEMI
- TOSHIBAPb
- TOBHIBA
- TOSHBA
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.1 nF
Max Operating Temperature150 °C
Max Power Dissipation270 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max80 mΩ
Rise Time30 ns
Schedule B8541290080
Turn-Off Delay Time150 ns
Turn-On Delay Time70 ns