공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-05-29
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
설명
유통업체에서 제공한 onsemi FCH110N65F-F155에 대한 설명입니다.
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 35 A, 110 mΩ, TO-247
MOSFET N-CH 650V 35A TO247 / N-Channel 650 V 35A (Tc) 357W (Tc) Through Hole TO-247-3
Power Field-Effect Transistor, 35A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AB
Aluminum Electrolytic Capacitors 47μF Radial, Can - SMD ±20% Tape & Reel (TR) HB 0.228 5.80mm Surface Mount Automotive 65mA Cap Aluminum Lytic 47uF 25V 20% (6.3 X 5.8mm) SMD 65mA 2000h 105C T/R
SuperFET®II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailoredto minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently,SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Weight6.39 g
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time5.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.895 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation357 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation357 W
Rds On Max110 mΩ
Resistance110 mΩ
Rise Time21 ns
Turn-Off Delay Time89 ns
Turn-On Delay Time31 ns
Dimensions
Height24.75 mm