공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-12-11
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2025-09-29
LTD Date2026-03-29
관련 부품
STMicroelectronicsSTWA57N65M5
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh M5 Power MOSFET in TO-247 long leads package
onsemiFCH067N65S3-F155
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-247
STMicroelectronicsSTW48N60M2
N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO-247 package
STMicroelectronicsSTWA48N60M2
N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO-247 long leads package
설명
유통업체에서 제공한 STMicroelectronics STWA45N65M5에 대한 설명입니다.
N-channel 650 V, 0.067 Ohm typ., 35 A MDmesh M5 Power MOSFET in TO-247 long leads package
Power Field-Effect Transistor, 35A I(D), 650V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
210W(Tc) 25V 5V@ 250µA 82nC@ 10 V 1individualNChannel 650V 78mΩ@ 17.5A,10V 35A 3.47nF@100V TO-247 Through hole mounting 20.15mm(height)
MOSFET, N-CH, 650V, 35A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.067ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance78 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time9.3 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.47 nF
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation210 W
Rds On Max78 mΩ
Rise Time11 ns
Turn-Off Delay Time16 ns
Turn-On Delay Time79.5 ns